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| FLC157XP GaAs FET & HEMT Chips FEATURES * * * * High Output Power: P1dB = 31.5dBm (Typ.) High Gain: G1dB = 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain Drain DESCRIPTION The FLC157XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. Gate Gate Source ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25C 8.3 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance of 200. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V IDS 0.6IDSS f = 8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30A Min. 150 -1.0 -5 30.5 5.0 Limit Typ. Max. 600 300 -2.0 31.5 6.0 29.5 15 900 -3.5 18 Unit mA mS V V dBm dB % C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 1 FLC157XP GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 600 Drain Current (mA) VGS =0V -0.5V 400 -1.0V 200 -1.5V -2.0V 0 50 100 150 200 2 4 6 8 10 Total Power Dissipation (W) 10 8 6 4 2 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 32 Output Power (dBm) 30 28 26 24 8GHz Pout f=4GHz P1dB & add vs. VDS f=8GHz IDS0.6IDSS VDS=10V IDS0.6IDSS f=4GHz 8GHz 34 P1dB (dbm) 33 add (%) 30 20 10 add 31 30 8 22 20 P1dB 20 10 15 17 19 21 23 25 27 Input Power (dBm) 9 10 Drain-Source Voltage (V) 2 add (%) 32 add 30 FLC157XP GaAs FET & HEMT Chips FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 S11 MAG .993 .918 .881 .868 .868 .871 .875 .881 .886 .892 .897 .903 .907 .912 ANG -25.9 -98.4 -134.6 -159.5 -169.8 -176.3 178.9 174.8 171.2 167.8 164.6 161.5 158.4 155.5 S-PARAMETERS VDS = 10V, IDS = 400mA S21 S12 MAG ANG MAG ANG 15.864 10.322 6.162 3.250 2.178 1.625 1.284 1.051 .878 .743 .633 .541 .462 .393 165.0 123.1 100.0 77.3 61.7 48.3 36.0 24.6 13.8 3.7 -5.8 -14.6 -22.9 -30.5 .013 .041 .049 .051 .051 .050 .050 .050 .052 .054 .057 .061 .067 .072 76.4 40.2 24.2 15.8 14.8 16.3 19.3 23.3 27.9 32.5 36.7 40.2 42.8 44.6 S22 MAG .185 .293 .337 .375 .413 .456 .503 .550 .597 .641 .682 .720 .753 .783 ANG -39.7 -115.6 -139.9 -150.6 -152.6 -153.5 -154.9 -156.8 -159.3 -162.2 -165.4 -168.7 -172.1 -175.6 NOTE:* The data includes bonding wires. n: number of wires Gate Drain n=2 (0.3mm length, 25m Dia Au wire) n=2 (0.3mm length, 25m Dia Au wire) Download S-Parameters, click here Source n=4 (0.3mm length, 25m Dia Au wire) 3 FLC157XP GaAs FET & HEMT Chips CHIP OUTLINE 60 (Unit: m) Drain Drain 61030 500 170 Gate Gate Source 155 270 950 106030 50 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 65 Source electrodes are electrically insulated from the bottom of the chip (PHS) Die Thickness: 6020m 70 |
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